International Journal of Technology

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2231-3915 (Online)
2231-3907 (Print)


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Impact of various Doping Distributions on N-MOSFET Performance

Author(s): Nitin Sachdeva, Munish Vashishath, P.K. Bansal

Email(s): Email ID Not Available

DOI: 10.5958/2231-3915.2018.00005.6

Address: Ms. Nitin Sachdeva1*, Dr. Munish Vashishath2, P.K. Bansal3
1Assistant Professor, Electronics Department, YMCAUST, Faridabad, India
2Chairman and Professor, Electronics Department, YMCAUST, Faridabad, India,
3Professor, Electronics Department, MMIT, Malout, India *Corresponding Author

Published In:   Volume - 8,      Issue - 1,     Year - 2018


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Cite this article:
Nitin Sachdeva, Munish Vashishath, P.K. Bansal. Impact of various Doping Distributions on N-MOSFET Performance. Int. J. Tech. 2018; 8(1): 23-32 doi: 10.5958/2231-3915.2018.00005.6

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International Journal of Technology (IJT) is an international, peer-reviewed journal, research journal aiming at promoting and publishing original high quality research in all disciplines of engineering sciences and technology...... Read more >>>

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DOI: 10.5958/2231-3915 

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International Journal of Technology (IJT) is an international, peer-reviewed journal, research journal aiming at promoting and publishing original high quality research in all disciplines of engineering sciences and technology. Viz. Mechanical Engineering, Civil Engineering, Electrical Engineering, Electronics and Telecommunication Engineering, Computer Engineering, Chemical Engineering, Biotechnology, Information Technology, Architecture Engineering etc.
IJT publishes Original research Articles, Short Communications, Review Articles in all areas of Engineering and Technology. The subject covered is Engineering Mechanics, Construction Materials, Surveying, Fluid Mechanics and Hydraulics, Modeling and Simulations, Thermodynamics, Refrigeration and Air-conditioning, Metallurgy, Electronic Communication Systems, Agricultural Machinery and Equipment, Applied Sciences, Chemical Engineering etc.    
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